Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers
文献类型：期刊论文
| 作者 | Zhu ZM ; Li GH ; Liu NZ ; Wang SZ ; Han HX ; Wang ZP |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1999 |
| 卷号 | 85期号:3页码:1775-1779 |
| 关键词 | P-TYPE ZNSE MOLECULAR-BEAM EPITAXY EXCITATION SPECTROSCOPY LASER-DIODES ACCEPTORS GROWTH |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhu zm,acad sinica,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the photoluminescence (pl) properties of nitrogen-doped znse epilayers grown by molecular beam epitaxy using a nitrogen radio frequency-plasma source. the pl data shows that the relative intensity of the donor-bound exciton (i-2) emission to the acceptor-bound exciton (i-1) emission strongly depends on both the excitation power and the temperature. this result is explained by a thermalization model of the bound exciton which involved in the capture and emission between the neutral donor bound exciton, the neutral acceptor bound exciton and the free exciton. quantitative analysis with the proposed mechanism is in good agreement with the experimental data. (c) 1999 american institute of physics. [s0021-8979(99)09102-1]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13010]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu ZM,Li GH,Liu NZ,et al. Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers[J]. journal of applied physics,1999,85(3):1775-1779. |
| APA | Zhu ZM,Li GH,Liu NZ,Wang SZ,Han HX,&Wang ZP.(1999).Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers.journal of applied physics,85(3),1775-1779. |
| MLA | Zhu ZM,et al."Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers".journal of applied physics 85.3(1999):1775-1779. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。