Electron irradiation and thermal annealing effect on GaAs solar cells
文献类型：期刊论文
| 作者 | Xiang XB ; Du WH ; Chang XL ; Liao XB |
| 刊名 | solar energy materials and solar cells
 |
| 出版日期 | 1998 |
| 卷号 | 55期号:4页码:313-322 |
| ISSN号 | 0927-0248 |
| 关键词 | GaAs solar cells irradiation |
| 通讯作者 | xiang xb,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | this paper describes the effect of electron irradiation and thermal annealing on lpe algaas/gaas heterojunction solar cells with various p/n junction depths. the electron irradiation experiments were performed with energy of 3 mev, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). the results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees c for 30 min. four electron traps, e-c - 0.24 ev, e-c - 0.41 ev, e-c - 0.51 ev, e-c - 0.59 ev, were found by dlts analysis, only two shallow levels of which could be removed by the annealing. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13012]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xiang XB,Du WH,Chang XL,et al. Electron irradiation and thermal annealing effect on GaAs solar cells[J]. solar energy materials and solar cells,1998,55(4):313-322. |
| APA | Xiang XB,Du WH,Chang XL,&Liao XB.(1998).Electron irradiation and thermal annealing effect on GaAs solar cells.solar energy materials and solar cells,55(4),313-322. |
| MLA | Xiang XB,et al."Electron irradiation and thermal annealing effect on GaAs solar cells".solar energy materials and solar cells 55.4(1998):313-322. |
入库方式： OAI收割
来源：半导体研究所
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