Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates
文献类型：期刊论文
| 作者 | Niu ZC ; Notzel R ; Jahn U ; Schonherr HP ; Fricke J ; Ploog KH |
| 刊名 | journal of electronic materials
 |
| 出版日期 | 1999 |
| 卷号 | 28期号:1页码:1-5 |
| 关键词 | high-index substrates molecular beam epitaxy (MBE) patterned growth three-dimensionally confined nanostructures SIDEWALL QUANTUM WIRES GAAS PHOTOLUMINESCENCE DOTS MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0361-5235 |
| 通讯作者 | niu zc,paul drude inst festkorperelekt,hausvogteipl 5-7,d-10117 berlin,germany. |
| 中文摘要 | the formation of triangular-shaped dot-like (td) structures grown by molecular beam epitaxy on gaas (311)a substrates patterned with square- and triangular-shaped holes is compared. on substrates patterned with square-shaped holes, td structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)a sidewalls of the as-etched holes develop a rough morphology during growth. the evolution of the rough ( 1 1 1)a sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar td structures with highly improved uniformity over the entire pattern. spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the td structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. formation of td structures provides a new approach do fabricate three-dimensionally confined nanostructures in a controlled manner. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13016]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu ZC,Notzel R,Jahn U,et al. Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates[J]. journal of electronic materials,1999,28(1):1-5. |
| APA | Niu ZC,Notzel R,Jahn U,Schonherr HP,Fricke J,&Ploog KH.(1999).Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates.journal of electronic materials,28(1),1-5. |
| MLA | Niu ZC,et al."Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates".journal of electronic materials 28.1(1999):1-5. |
入库方式： OAI收割
来源：半导体研究所
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