Study on the oxygen concentration reduction in heavily Sb-doped silicon
文献类型：期刊论文
| 作者 | Liu CC ; Wang HM ; Li YX ; Wang QL ; Ren BY ; Xu YS ; Que DL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 196期号:1页码:111-114 |
| 关键词 | heavily Sb-doped silicon oxygen concentration thermodynamic calculation oxygen solubility lattice strain |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu cc,zhejiang univ,natl key lab silicon mat,hangzhou 310027,peoples r china. |
| 中文摘要 | it was determined that oxygen concentration in heavily sb-doped silicon was about 40% lower than that in the lightly doped czochralski grown silicon and decreased with increasing content of sb by means of coincident elastic recoil detection analysis. through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of sio, and sb2o3 evaporation can be neglected. the basic reason for oxygen concentration reduction in heavily sb-doped czsi was that oxygen solubility decreased when element sb with larger radius doped degenerately into silicon crystal. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13022]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu CC,Wang HM,Li YX,et al. Study on the oxygen concentration reduction in heavily Sb-doped silicon[J]. journal of crystal growth,1999,196(1):111-114. |
| APA | Liu CC.,Wang HM.,Li YX.,Wang QL.,Ren BY.,...&Que DL.(1999).Study on the oxygen concentration reduction in heavily Sb-doped silicon.journal of crystal growth,196(1),111-114. |
| MLA | Liu CC,et al."Study on the oxygen concentration reduction in heavily Sb-doped silicon".journal of crystal growth 196.1(1999):111-114. |
入库方式： OAI收割
来源：半导体研究所
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