Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)
文献类型：期刊论文
| 作者 | Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG |
| 刊名 | revista mexicana de fisica
 |
| 出版日期 | 1998 |
| 卷号 | 44期号:0页码:85-88 |
| 关键词 | diffusion implantation Ge ion BF2 ion ION-IMPLANTATION REGROWTH SILICON LAYERS ELECTRICAL-PROPERTIES |
| ISSN号 | 0035-001x |
| 通讯作者 | zou lf,ctr invest opt ac,unidad aguascalientes,juan montoro 207,zona ctr,aguascalientes 20000,ags,mexico. |
| 中文摘要 | the annealing behavior of si implanted with ge and then bf2 has been characterized by double crystal x-ray diffraction (dcxrd) and secondary ion mass spectroscopy (sims). the results show that annealing at 600 degrees c for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of ge and b atoms has occurred during the annealing. the initial crystallinity of si is fully recovered after annealing at 950 degrees c for 60 minutes and accompanied by ge diffusion. very shallow boron junction depth has been formed. when annealing temperature rises to 1050 degrees c, b diffusion enhances, which leads to a deep diffusion and good distribution of b atoms into the si substrate. the x-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees c for 60 minutes display two sige peaks, which may be related to the b concentration profiles. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13024]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zou LF,Acosta-Ortiz SE,Zou LX,et al. Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)[J]. revista mexicana de fisica,1998,44(0):85-88. |
| APA | Zou LF,Acosta-Ortiz SE,Zou LX,Regalado LE,Sun DZ,&Wang ZG.(1998).Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001).revista mexicana de fisica,44(0),85-88. |
| MLA | Zou LF,et al."Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)".revista mexicana de fisica 44.0(1998):85-88. |
入库方式： OAI收割
来源：半导体研究所
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