Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
文献类型：期刊论文
| 作者 | Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG |
| 刊名 | revista mexicana de fisica
 |
| 出版日期 | 1998 |
| 卷号 | 44期号:0页码:93-96 |
| 关键词 | gas source molecular beam epitaxy thermal stability Si1-xGex HETEROSTRUCTURES STRAIN RELAXATION |
| ISSN号 | 0035-001x |
| 通讯作者 | zou lf,ctr invest opt ac,unidad aguascalientes,juan montoro 207,zona ctr,aguascalientes 20000,ags,mexico. 电子邮箱地址: lfzou@ags.ciateq.mx |
| 中文摘要 | gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13026]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zou LF,Acosta-Ortiz SE,Zou LX,et al. Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials[J]. revista mexicana de fisica,1998,44(0):93-96. |
| APA | Zou LF,Acosta-Ortiz SE,Zou LX,Regalado LE,Sun DZ,&Wang ZG.(1998).Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials.revista mexicana de fisica,44(0),93-96. |
| MLA | Zou LF,et al."Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials".revista mexicana de fisica 44.0(1998):93-96. |
入库方式： OAI收割
来源：半导体研究所
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