Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation
文献类型：期刊论文
| 作者 | Jie WZ ; Jin CS ; Fan Z ; Jie WX ; Wei W ; Han WR |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 1999 |
| 卷号 | 11期号:1页码:3-5 |
| 关键词 | CVD insulation leakage currents oxidation quantum-well lasers semiconductor heterojunctions thermal factors DIODES LEAKAGE CURRENT |
| ISSN号 | 1041-1135 |
| 通讯作者 | jie wz,natl univ singapore,inst mat res & engn,singapore 119260,singapore. |
| 中文摘要 | a novel idea of inalas native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure ingaasp-inp laser is first proposed and demonstrated. a characteristic temperature (t-0) of 50 k is achieved from an ina1as native oxide buried heterostructure (nobh) ingaasp-inp multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. the threshold current and slope efficiency of nobh laser changes from 5.6 ma, 0.23 mw/ma to 28 ma, 0.11 mw/ma with the operating temperature changing from 20 degrees c to 100 degrees c. it is comparable to conventional p-n reverse biased junction bh laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13030]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jie WZ,Jin CS,Fan Z,et al. Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation[J]. ieee photonics technology letters,1999,11(1):3-5. |
| APA | Jie WZ,Jin CS,Fan Z,Jie WX,Wei W,&Han WR.(1999).Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation.ieee photonics technology letters,11(1),3-5. |
| MLA | Jie WZ,et al."Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation".ieee photonics technology letters 11.1(1999):3-5. |
入库方式： OAI收割
来源：半导体研究所
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