Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 1999 |
| 卷号 | 85期号:1页码:619-621 |
| ISSN号 | 0021-8979 |
| 关键词 | VAPOR-PHASE EPITAXY INJECTION PATTERNS ISLANDS |
| 通讯作者 | liu fq,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | molecular beam epitaxy has been used for growing ingaas self-assembled quantum dots (qds) in inalas on an inp(001) substrate. nominal deposition of 9.6 monolayers of in0.9ga0.1as results in qds of similar to 6.5 nm high with an areal density of 3.3 x 10(11) cm(-2). conspicuous bimodal size distribution is identified, and is responsible for the observed qds photoluminescence (pl) emission with two peaks at 0.627 and 0.657 ev. good agreement is achieved between the observed pl peak energies and calculated results. (c) 1999 american institute of physics. [s00218979(99)00101-2]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13040]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)[J]. journal of applied physics,1999,85(1):619-621. |
| APA | Xu B.(1999).Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001).journal of applied physics,85(1),619-621. |
| MLA | Xu B."Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)".journal of applied physics 85.1(1999):619-621. |
入库方式： OAI收割
来源：半导体研究所
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