Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
文献类型：期刊论文
| 作者 | Foxon CT ; Hooper SE ; Cheng TS ; Orton JW ; Ren GB ; Ber BY ; Merkulov AV ; Novikov SV ; Tret'yakov VV |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1998 |
| 卷号 | 13期号:12页码:1469-1471 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAAS |
| ISSN号 | 0268-1242 |
| 通讯作者 | cheng ts,univ nottingham,dept phys,univ pk,nottingham ng7 2rd,england. |
| 中文摘要 | the effect of using an indium flux during the mbe growth of gan layers was investigated. the properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. the optical properties of the gan layers are shown to improve as compared with undoped gan layers grown under nominally the same conditions but without an additional indium flux. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13044]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Foxon CT,Hooper SE,Cheng TS,et al. Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux[J]. semiconductor science and technology,1998,13(12):1469-1471. |
| APA | Foxon CT.,Hooper SE.,Cheng TS.,Orton JW.,Ren GB.,...&Tret'yakov VV.(1998).Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux.semiconductor science and technology,13(12),1469-1471. |
| MLA | Foxon CT,et al."Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux".semiconductor science and technology 13.12(1998):1469-1471. |
入库方式： OAI收割
来源：半导体研究所
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