Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
文献类型：期刊论文
| 作者 | Liu JP ; Kong MY ; Huang DD ; Li JP ; Sun DZ |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 194期号:3-4页码:426-429 |
| 关键词 | X-ray diffraction SiGe/Si disilane cracking dynamic simulation PHOTOLUMINESCENCE SILICON LAYERS SI2H6 DISORDERED SUPERLATTICES |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | structural properties of sige/si single wells are studied by double-crystal x-ray diffraction. four sige/si single wells have been grown on si (0 0 1) at 750 degrees c by disilane and solid-ge molecular beam epitaxy with varied disilane cracking temperature. using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. the results are compared with those obtained from pl and xtem as well as aes measurements. it is found that disilane adsorption is dependent on cracking temperature as well as ge incorporation. disilane adsorption is increased by cracking disilane while it decreased with ge incorporation (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13048]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Kong MY,Huang DD,et al. Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature[J]. journal of crystal growth,1998,194(3-4):426-429. |
| APA | Liu JP,Kong MY,Huang DD,Li JP,&Sun DZ.(1998).Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature.journal of crystal growth,194(3-4),426-429. |
| MLA | Liu JP,et al."Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature".journal of crystal growth 194.3-4(1998):426-429. |
入库方式： OAI收割
来源：半导体研究所
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