Effects of annealing on self-organized InAs quantum islands on GaAs (100)
文献类型：期刊论文
| 作者 | Mo QW ; Fan TW ; Gong Q ; Wu J ; Wang ZG ; Bai YQ |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:24页码:3518-3520 |
| 关键词 | MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES COHERENT ISLANDS GROWTH DOTS DISLOCATIONS TEMPERATURE MECHANISMS SI(001) INGAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | mo qw,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | self-organized inas islands on (001) gaas grown by molecular beam epitaxy were annealed and characterized with photoluminescence (pl) and transmission electron microscopy (tem). the pl spectra from the inas islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the pl peak. in addition, the tem analysis revealed the relaxation of strain in some inas islands with the introduction of the network of 90 degrees dislocations. the correlation between the changes in the pl spectra and the relaxation of strain in inas islands was discussed. (c) 1998 american institute of physics. [s0003-6951(98)01850-6]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13050]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mo QW,Fan TW,Gong Q,et al. Effects of annealing on self-organized InAs quantum islands on GaAs (100)[J]. applied physics letters,1998,73(24):3518-3520. |
| APA | Mo QW,Fan TW,Gong Q,Wu J,Wang ZG,&Bai YQ.(1998).Effects of annealing on self-organized InAs quantum islands on GaAs (100).applied physics letters,73(24),3518-3520. |
| MLA | Mo QW,et al."Effects of annealing on self-organized InAs quantum islands on GaAs (100)".applied physics letters 73.24(1998):3518-3520. |
入库方式： OAI收割
来源：半导体研究所
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