Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 1998 |
| 卷号 | 84期号:11页码:6466-6468 |
| 关键词 | SEMICONDUCTORS SPECTROSCOPY |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhao ms,qufu normal univ,laser res inst,shandong 273165,peoples r china. 电子邮箱地址: mszhao@ji-public.sd.cninfo.net |
| 中文摘要 | we report the observation of oscillating features in differential reflectance spectra from the gaas epilayer grown on si substrate in the energy range both below and above the fundamental band gap. it is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. the interference arises from two light beams reflected from different interfaces of the sample. the calculated spectra in the nonabsorption region are in good agreement with measured data. it is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures. (c) 1998 american institute of physics. [s0021-8979(98)08723-4]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13058]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate[J]. journal of applied physics,1998,84(11):6466-6468. |
| APA | Jiang DS.(1998).Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate.journal of applied physics,84(11),6466-6468. |
| MLA | Jiang DS."Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate".journal of applied physics 84.11(1998):6466-6468. |
入库方式： OAI收割
来源：半导体研究所
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