Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 193期号:4页码:478-483 |
| 关键词 | GaN MgAl2O4 buffer layer threading dislocation transmission electron microscopy LASER-DIODES GROWN GAN FILMS SAPPHIRE NITRIDE DEFECTS CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | 0022-0248 |
| 通讯作者 | han pd,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | microstructure of gan buffer layer grown on (111)mgal2o4 substrate by metalorganic vapor phase epitaxy (movpe) was studied by transmission electron microscopy (tem). it has been observed that the early deposition of gan buffer layer on the substrate at a relatively low temperature formed a continual island-sublayer (5 nm thick) with hexagonal crystallographic structure, and the subsequent gan buffer deposition led to crystal columns which are composed of nano-crystal slices with mixed cubic and hexagonal phases. after high-temperature annealing, the crystallinity of nano-crystal slices and island-sublayer in the buffer layer have been improved. the formation of threading dislocations in the gan him is attributed not only to the lattice mismatch of gan/mgal2o4 interface, but also to the stacking mismatches at the crystal column boundaries. (c) 1998 published by elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13060]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Microstructure evolution of GaN buffer layer on MgAl2O4 substrate[J]. journal of crystal growth,1998,193(4):478-483. |
| APA | Han PD.(1998).Microstructure evolution of GaN buffer layer on MgAl2O4 substrate.journal of crystal growth,193(4),478-483. |
| MLA | Han PD."Microstructure evolution of GaN buffer layer on MgAl2O4 substrate".journal of crystal growth 193.4(1998):478-483. |
入库方式： OAI收割
来源：半导体研究所
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