The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Wang LS ; Liu XL ; Zan YD ; Wang D ; Lu DC ; Wang ZG ; Wang YT ; Cheng LS ; Zhang Z |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 193期号:4页码:484-490 |
| 关键词 | GaN MOVPE growth Al2O3 coated Si substrate crystal structure photoluminescence spectrum SINGLE CRYSTALLINE GAN HIGH-QUALITY GAN INTERMEDIATE LAYER BUFFER LAYERS SI FILMS ALN DEPOSITION SAPPHIRE MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang ls,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. 电子邮箱地址: lswang@red.semi.ac.cn |
| 中文摘要 | single crystal gan films have been grown on to an al2o3 coated (001)si substrate in a horizontal-type low-pressure movpe system. a thin al2o3 layer is an intermediate layer for the growth of single crystal gan on to si although it is only an oriented polycrystal him as shown by reflection high electron diffraction. moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the gan overlayer as studied by transmission electron microscopy. double crystal x-ray diffraction showed that the linewidth of (0002) peak of the x-ray rocking curve of the 1.3 mu m sample was 54 arcmin and the films had heavy mosaic structures. a near band edge peaking at 3.4 ev at room temperature was observed by photoluminescence spectroscopy. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13062]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang LS,Liu XL,Zan YD,et al. The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy[J]. journal of crystal growth,1998,193(4):484-490. |
| APA | Wang LS.,Liu XL.,Zan YD.,Wang D.,Lu DC.,...&Zhang Z.(1998).The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy.journal of crystal growth,193(4),484-490. |
| MLA | Wang LS,et al."The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy".journal of crystal growth 193.4(1998):484-490. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。