Microstructure and photoluminescence of a-SiOx : H
文献类型：期刊论文
| 作者 | Ma ZX ; Liao XB ; Cheng WC ; He J ; Yue GZ ; Wang YQ ; Kong GL |
| 刊名 | science in china series a-mathematics
 |
| 出版日期 | 1998 |
| 卷号 | 41期号:9页码:1002-1008 |
| 关键词 | quantum confinement effects photoluminescence infrared and Raman spectra SILICON MATRIX SYSTEM FILMS OXIDE VISIBLE-LIGHT EMISSION |
| ISSN号 | 1006-9283 |
| 通讯作者 | ma zx,chinese acad sci,ctr condensed matter phys,inst semicond,state lab surface phys,beijing 100083,peoples r china. |
| 中文摘要 | two strong photoluminescence (pl) bands in the spectral range of 550-900 nm have been observed at room temperature from a series of a-siox:h films fabricated by plasma-enhanced chemical vapor deposition (pecvd) technique. one is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 1170 degrees c annealing in n-2 atmosphere. in conjunction with infrared (ir) and micro-raman spectra, it is thought that the two pl bands are associated with a-si clusters in the siox network and nanocrystalline silicon in sio2, respectively. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13074]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma ZX,Liao XB,Cheng WC,et al. Microstructure and photoluminescence of a-SiOx : H[J]. science in china series a-mathematics,1998,41(9):1002-1008. |
| APA | Ma ZX.,Liao XB.,Cheng WC.,He J.,Yue GZ.,...&Kong GL.(1998).Microstructure and photoluminescence of a-SiOx : H.science in china series a-mathematics,41(9),1002-1008. |
| MLA | Ma ZX,et al."Microstructure and photoluminescence of a-SiOx : H".science in china series a-mathematics 41.9(1998):1002-1008. |
入库方式： OAI收割
来源：半导体研究所
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