Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:18页码:2657-2659 |
| 关键词 | CARRIER RELAXATION EXCITED-STATES ELECTROREFLECTANCE |
| ISSN号 | 0003-6951 |
| 通讯作者 | sun bq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn |
| 中文摘要 | we present a detailed study of the interband excitonic transitions of inas/gaas self-organized quantum dots (qds) based on photovoltage (pv) photoreflectance (pr) and photoluminescence (pl) spectroscopy. at room temperature, the interband absorption transitions of qds have been observed by using pv spectrum, which clearly exhibits four well-resolved excitonic absorption peaks. the absorption line shape is gaussian-like. furthermore, the corresponding excitonic transitions are also observed in pr experiment at 77 k. the first derivative of a gaussian profile can fit the experimental data well. (c) 1998 american institute of physics. [s0003-6951(98)00743-8] |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13078]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots[J]. applied physics letters,1998,73(18):2657-2659. |
| APA | Jiang DS.(1998).Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots.applied physics letters,73(18),2657-2659. |
| MLA | Jiang DS."Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots".applied physics letters 73.18(1998):2657-2659. |
入库方式： OAI收割
来源：半导体研究所
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