Void-like defects in annealed Czochralski silicon
文献类型：期刊论文
| 作者 | Gao M ; Duan XF ; Peng LM ; Li J |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:16页码:2311-2312 |
| 关键词 | CRYSTAL-ORIGINATED PARTICLES WAFERS SIO2 |
| ISSN号 | 0003-6951 |
| 通讯作者 | gao m,chinese acad sci,inst phys,beijing lab electron microscopy,pob 603,beijing 100080,peoples r china. |
| 中文摘要 | void-like defects of octahedron structure having {111} facets were observed in annealed czochralski silicon. the amorphous coverage of siox and sicx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. it is suggested that these defects are a kind of amorphous precipitate origin. a mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. (c) 1998 american institute of physics. [s0003-6951(98)02842-3]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13082]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao M,Duan XF,Peng LM,et al. Void-like defects in annealed Czochralski silicon[J]. applied physics letters,1998,73(16):2311-2312. |
| APA | Gao M,Duan XF,Peng LM,&Li J.(1998).Void-like defects in annealed Czochralski silicon.applied physics letters,73(16),2311-2312. |
| MLA | Gao M,et al."Void-like defects in annealed Czochralski silicon".applied physics letters 73.16(1998):2311-2312. |
入库方式： OAI收割
来源：半导体研究所
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