中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

文献类型:期刊论文

作者Wang YQ ; Liao XB ; Ma ZX ; Yue GZ ; Diao HW ; He J ; Kong GL ; Zhao YW ; Li ZM ; Yun F
刊名applied surface science
出版日期1998
卷号135期号:1-4页码:205-208
关键词amorphous silicon solid-phase crystallization rapid thermal annealing LPCVD POLYCRYSTALLINE SILICON LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION
ISSN号0169-4332
通讯作者wang yq,chinese acad sci,inst semicond,solid state phys lab,pob 912,beijing 100083,peoples r china.
中文摘要an improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by pecvd. the solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees c thermal bias/l-s 850 degrees c thermal pulse. a mean grain size more than 1000 angstrom and a hall mobility of 24.9 cm(2)/v s are obtained in the crystallized films. the results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (c) 1998 elsevier science b.v. all rights reserved.
学科主题半导体化学
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/13088]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang YQ,Liao XB,Ma ZX,et al. Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing[J]. applied surface science,1998,135(1-4):205-208.
APA Wang YQ.,Liao XB.,Ma ZX.,Yue GZ.,Diao HW.,...&Yun F.(1998).Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing.applied surface science,135(1-4),205-208.
MLA Wang YQ,et al."Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing".applied surface science 135.1-4(1998):205-208.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。