Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing
文献类型:期刊论文
作者 | Wang YQ ; Liao XB ; Ma ZX ; Yue GZ ; Diao HW ; He J ; Kong GL ; Zhao YW ; Li ZM ; Yun F |
刊名 | applied surface science
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出版日期 | 1998 |
卷号 | 135期号:1-4页码:205-208 |
关键词 | amorphous silicon solid-phase crystallization rapid thermal annealing LPCVD POLYCRYSTALLINE SILICON LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION |
ISSN号 | 0169-4332 |
通讯作者 | wang yq,chinese acad sci,inst semicond,solid state phys lab,pob 912,beijing 100083,peoples r china. |
中文摘要 | an improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by pecvd. the solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees c thermal bias/l-s 850 degrees c thermal pulse. a mean grain size more than 1000 angstrom and a hall mobility of 24.9 cm(2)/v s are obtained in the crystallized films. the results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (c) 1998 elsevier science b.v. all rights reserved. |
学科主题 | 半导体化学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/13088] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang YQ,Liao XB,Ma ZX,et al. Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing[J]. applied surface science,1998,135(1-4):205-208. |
APA | Wang YQ.,Liao XB.,Ma ZX.,Yue GZ.,Diao HW.,...&Yun F.(1998).Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing.applied surface science,135(1-4),205-208. |
MLA | Wang YQ,et al."Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing".applied surface science 135.1-4(1998):205-208. |
入库方式: OAI收割
来源:半导体研究所
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