Structure, fluorescence and stability of CdS nanoparticles prepared in air
文献类型：期刊论文
| 作者 | Chen W ; Lin ZJ ; Wang ZG ; Xu Y ; Lin LY |
| 刊名 | journal of materials science & technology
 |
| 出版日期 | 1998 |
| 卷号 | 14期号:5页码:389-394 |
| 关键词 | SEMICONDUCTOR MICROCRYSTALS QUANTUM CONFINEMENT OPTICAL-PROPERTIES NANOCRYSTALS PHOTOCHEMISTRY CLUSTERS CRYSTALLITES PARTICLES EXCITONS COLLOIDS |
| ISSN号 | 1005-0302 |
| 通讯作者 | chen w,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | cds nanoparticies were prepared in air and their stability by air annealing was studied. a small change in crystal structure and particle size was observed by air annealing, but a rapid reduction in fluorescence was found. through investigation, it is revealed that it is the surface change or reconstruction rather than the variation of the size or structure that decreases the fluorescence. the emission of the particles consists with two peaks which are dependent on the excitation energy. the two peaks are considered to be arisen from "two" different sizes of nanoparticles and may be explained in terms of selectively excited photoluminescence. finally we discuss why the discrete state of nanoparticles are able to be resolved in the photoluminescence excitation spectrum, but could not be differentiated in the absorption spectrum. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13090]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen W,Lin ZJ,Wang ZG,et al. Structure, fluorescence and stability of CdS nanoparticles prepared in air[J]. journal of materials science & technology,1998,14(5):389-394. |
| APA | Chen W,Lin ZJ,Wang ZG,Xu Y,&Lin LY.(1998).Structure, fluorescence and stability of CdS nanoparticles prepared in air.journal of materials science & technology,14(5),389-394. |
| MLA | Chen W,et al."Structure, fluorescence and stability of CdS nanoparticles prepared in air".journal of materials science & technology 14.5(1998):389-394. |
入库方式： OAI收割
来源：半导体研究所
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