Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
文献类型：期刊论文
| 作者 | Pan D ; Towe E ; Kennerly S |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:14页码:1937-1939 |
| 关键词 | ABSORPTION |
| ISSN号 | 0003-6951 |
| 通讯作者 | pan d,univ virginia,lab opt & quantum elect,charlottesville,va 22903 usa. |
| 中文摘要 | we report the device performance of normal-incidence (in, ga)as/gaas quantum dot intersubband infrared photodetectors. a primary intersubband transition peak is observed at the wavelength of 13 mu m (e-0 --> e-1) and a secondary peak at 11 mu m (e-0 --> e-2). the measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. a peak detectivity of 1 x 10(10) cm hz(1/2)/w at 13 mu m was achieved at 40 k for these devices. (c) 1998 american institute of physics. [s0003-6951(98)01440-5]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13094]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan D,Towe E,Kennerly S. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors[J]. applied physics letters,1998,73(14):1937-1939. |
| APA | Pan D,Towe E,&Kennerly S.(1998).Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors.applied physics letters,73(14),1937-1939. |
| MLA | Pan D,et al."Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors".applied physics letters 73.14(1998):1937-1939. |
入库方式： OAI收割
来源：半导体研究所
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