The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy
文献类型：期刊论文
| 作者 | Liu XL ; Lu DC ; Wang LS ; Wang XH ; Wang D ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 193期号:1-2页码:23-27 |
| 关键词 | MOVPE GaN buffer layer growth rate growth parameters TRIMETHYLGALLIUM MECHANISMS QUALITY AMMONIA DIODES MOCVD GAAS THERMAL-DECOMPOSITION |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu xl,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the growth rate of gan buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (movpe) in an atmospheric pressure, two-channel reactor was studied. the growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. a model of the gan buffer layer growth process by movpe is proposed to interpret the experimental evidence. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13098]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu XL,Lu DC,Wang LS,et al. The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy[J]. journal of crystal growth,1998,193(1-2):23-27. |
| APA | Liu XL,Lu DC,Wang LS,Wang XH,Wang D,&Lin LY.(1998).The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy.journal of crystal growth,193(1-2),23-27. |
| MLA | Liu XL,et al."The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy".journal of crystal growth 193.1-2(1998):23-27. |
入库方式： OAI收割
来源：半导体研究所
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