Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices
文献类型：期刊论文
| 作者 | Liu J
|
| 刊名 | microelectronic engineering
 |
| 出版日期 | 1998 |
| 卷号 | 43-44期号:0页码:349-354 |
| 关键词 | GaAs/AlAs superlattices transport tunnelling Landau level LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS NEGATIVE DIFFERENTIAL CONDUCTIVITY |
| ISSN号 | 0167-9317 |
| 通讯作者 | liu j,vienna tech univ,inst festkorperelekt,floragasse 7-1,a-1040 vienna,austria. 电子邮箱地址: j.liu.20@bham.ac.uk |
| 中文摘要 | electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13104]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J. Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices[J]. microelectronic engineering,1998,43-44(0):349-354. |
| APA | Liu J.(1998).Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices.microelectronic engineering,43-44(0),349-354. |
| MLA | Liu J."Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices".microelectronic engineering 43-44.0(1998):349-354. |
入库方式： OAI收割
来源：半导体研究所
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