中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices

文献类型:期刊论文

作者Liu J
刊名microelectronic engineering
出版日期1998
卷号43-44期号:0页码:349-354
关键词GaAs/AlAs superlattices transport tunnelling Landau level LOW-FIELD MOBILITY SEMICONDUCTOR SUPERLATTICE TEMPERATURE-DEPENDENCE CONDUCTANCE TRANSPORT LOCALIZATION MINIBANDS NEGATIVE DIFFERENTIAL CONDUCTIVITY
ISSN号0167-9317
通讯作者liu j,vienna tech univ,inst festkorperelekt,floragasse 7-1,a-1040 vienna,austria. 电子邮箱地址: j.liu.20@bham.ac.uk
中文摘要electron transport in heavily-doped gaas/alas superlattices in parallel electric and magnetic fields is reported. the current-voltage (i-v) characteristic exhibited the feature of negative differential velocity (ndv) and high electric field domain effect at different biases. under strong magnetic fields, sequential resonant tunnelling through landau levels in the negative differential velocity regime is observed, which are manifested as oscillations in the conductance-voltage characteristics. (c) 1998 elsevier science b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/13104]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu J. Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices[J]. microelectronic engineering,1998,43-44(0):349-354.
APA Liu J.(1998).Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices.microelectronic engineering,43-44(0),349-354.
MLA Liu J."Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices".microelectronic engineering 43-44.0(1998):349-354.

入库方式: OAI收割

来源:半导体研究所

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