中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrawell and interwell transfer of excitons in growth-interrupted quantum wells

文献类型:期刊论文

作者Luo CP ; Chin MK ; Yuan ZL ; Xu ZY
刊名superlattices and microstructures
出版日期1998
卷号24期号:2页码:163-167
关键词photoluminescence growth interruption excitons relaxation GaAs/AlGaAs RELAXATION
ISSN号0749-6036
通讯作者chin mk,nanyang technol univ,sch elect engn,photon lab,singapore 639798,singapore.
中文摘要intrawell and interwell transfers of excitons are observed by a temperature-dependent continuous-wave photoluminescence study of growth-interrupted single quantum wells. the intrawell transfer among the interface localization areas suggests a thermodynamic equilibrium between energy relaxation via lo-phonon emission and thermal population via phonon absorption. thermal population is dominant in wider wells while relaxation is clearly observable in a four-monolayer narrow well at low temperatures. interwell transfer of excitons also occurs between two narrow wells. (c) 1998 academic press.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/13114]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Luo CP,Chin MK,Yuan ZL,et al. Intrawell and interwell transfer of excitons in growth-interrupted quantum wells[J]. superlattices and microstructures,1998,24(2):163-167.
APA Luo CP,Chin MK,Yuan ZL,&Xu ZY.(1998).Intrawell and interwell transfer of excitons in growth-interrupted quantum wells.superlattices and microstructures,24(2),163-167.
MLA Luo CP,et al."Intrawell and interwell transfer of excitons in growth-interrupted quantum wells".superlattices and microstructures 24.2(1998):163-167.

入库方式: OAI收割

来源:半导体研究所

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