Theory of terahertz-photocurrent resonances in miniband superlattices
文献类型：期刊论文
| 作者 | Xia JB |
| 刊名 | physical review b
 |
| 出版日期 | 1998 |
| 卷号 | 58期号:7页码:3565-3567 |
| ISSN号 | 0163-1829 |
| 关键词 | NEGATIVE DIFFERENTIAL CONDUCTIVITY GAAS/ALAS SUPERLATTICES |
| 通讯作者 | xia jb,china ctr adv sci & technol,world lab,pob 8730,beijing 100080,peoples r china. |
| 中文摘要 | the currents of de and ac components and their phase-angle cosines for a superlattice under a direct bias and alternating field are calculated with the balance equations. it is found that the de currents as functions of the direct field show resonance peaks at the fields corresponding to the bloch frequency equal to n omega. with increasing alternating field intensity the resonance peaks of higher harmonic increase, and simultaneously the first peak caused by the de field decreases. the results are in good agreement with the experimental results, indicating that this resonance can be understood in terms of electron acceleration within the miniband, i.e., it is a bulk superlattice effect, rather than caused by the electric-field localization mechanism (wannier stark ladder). the phase-angle cosine for the first harmonic cos phi(1) becomes negative when the bloch frequency increases to be larger than the frequency of the ac field omega, and it also shows resonance peaks at the resonance frequencies n omega. the negative cos phi(1) may cause the energy transferred to the alternating field, i.e., oscillation of the system. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13118]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xia JB. Theory of terahertz-photocurrent resonances in miniband superlattices[J]. physical review b,1998,58(7):3565-3567. |
| APA | Xia JB.(1998).Theory of terahertz-photocurrent resonances in miniband superlattices.physical review b,58(7),3565-3567. |
| MLA | Xia JB."Theory of terahertz-photocurrent resonances in miniband superlattices".physical review b 58.7(1998):3565-3567. |
入库方式： OAI收割
来源：半导体研究所
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