Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | philosophical magazine letters
 |
| 出版日期 | 1998 |
| 卷号 | 78期号:3页码:203-211 |
| 关键词 | THREADING DISLOCATION DENSITIES II-VI COMPOUNDS MISFIT DISLOCATIONS SEMICONDUCTORS ORIGIN FILMS |
| ISSN号 | 0950-0839 |
| 通讯作者 | han pd,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a transmission electron microscopy study of triple-ribbon contrast features in a znte layer grown epitaxially on a vicinal gaas (001) substrate is reported. the ribbons go through the layer as threading dislocations near the [<(11)over bar 2>](111) or [112](<(11)over bar 1>) directions. each of these (with a 40 nm width) has two narrow parts enclosed by three partial dislocations (with a 20 nm spacing). by contrast analysis and contrast simulation, the ribbons have been shown to be composed of two partially overlapping stacking faults. their origin is attributed to a forced reaction between two crossing perfect misfit dislocations. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13120]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer[J]. philosophical magazine letters,1998,78(3):203-211. |
| APA | Han PD.(1998).Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer.philosophical magazine letters,78(3),203-211. |
| MLA | Han PD."Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer".philosophical magazine letters 78.3(1998):203-211. |
入库方式： OAI收割
来源：半导体研究所
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