The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhang JP ; Sun DZ ; Li XB ; Wang XL ; Fu RH ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 192期号:1-2页码:93-96 |
| 关键词 | GaN 2DEG MD heterostructure MBE photoluminescence GAN LUMINESCENCE PLASMA GALLIUM NITRIDE |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang jp,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | using nh3 cracked on the growing surface as the nitrogen precursor, an algan/gan modulation-doped (md) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (mbe) system. though the al composition is as low as 0.036, as deduced from photoluminescence (pl) measurements, the algan barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2deg) at the heterointerface. the 2deg characteristics are verified by the variable temperature hall measurements down to 7 k. using a parallel conduction model, we estimate the actual mobility of the 2deg to be 1100 cm(2)/v s as the sheet carrier density to be 1.0 x 10(12) cm(-2). our results show that the algan/gan system is very suitable for the fabrication of high electron mobility transistors (hemts). (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13126]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JP,Sun DZ,Li XB,et al. The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy[J]. journal of crystal growth,1998,192(1-2):93-96. |
| APA | Zhang JP,Sun DZ,Li XB,Wang XL,Fu RH,&Kong MY.(1998).The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy.journal of crystal growth,192(1-2),93-96. |
| MLA | Zhang JP,et al."The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy".journal of crystal growth 192.1-2(1998):93-96. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。