Effects of growth interruption on self-assembled InAs/GaAs islands
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 192期号:1-2页码:97-101 |
| 关键词 | InAs/GaAs islands MBE PL growth interruption ORGANIZATION TRANSITION GAAS QUANTUM |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. 电子邮箱地址: zmwang@red.semi.ac.cn |
| 中文摘要 | the effect of growth interruption on the inas deposition and its subsequent growth as self-assembled island structures, in particular the material transport process of the inas layers has been investigated by photoluminescence and transmission electron microscopy measurements. inas material in structures with only coherent islands transfers from the wetting layer to the formed islands and the growth interruption causes a red shift of pl peak energy. on the other hand, the pl peak shifts to higher energy in structures containing simultaneously coherent and noncoherent islands with dislocations. in this case, the noncoherent islands capture inas material from the surrounding wetting layer as well as coherent islands, which casues a reduction in the size of these islands. the variations in the pl intensity and line width are also discussed. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13128]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Effects of growth interruption on self-assembled InAs/GaAs islands[J]. journal of crystal growth,1998,192(1-2):97-101. |
| APA | Han PD.(1998).Effects of growth interruption on self-assembled InAs/GaAs islands.journal of crystal growth,192(1-2),97-101. |
| MLA | Han PD."Effects of growth interruption on self-assembled InAs/GaAs islands".journal of crystal growth 192.1-2(1998):97-101. |
入库方式： OAI收割
来源：半导体研究所
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