Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li XB ; Sun DZ ; Dong JR ; Li JP ; Kong MY ; Yoon SF |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1998 |
| 卷号 | 83期号:12页码:7900-7902 |
| 关键词 | HETEROSTRUCTURES SUPERLATTICES |
| ISSN号 | 0021-8979 |
| 通讯作者 | li xb,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence (pl) investigation was carried out on gainp/gaas multiple quantum wells structures grown on (001) and (311) b surfaces of gaas by gas source molecular beam epitaxy. superlattice structures of gaas/gainp grown on (001) gaas substrate were also studied in comparison. deep-level luminescence was seen to dominate the pl spectra from the quantum wells and superlattice structures that were grown on (001) gaas substrate. in contrast, superior optical properties were exhibited in the same structures grown on (311) b gaas surfaces. the results suggested that gaas/gainp quantum well structures on (311) b oriented substrates could efficiently suppress the deep-level emissions, result in narrower pl peaks indicating smooth interfaces. (c) 1998 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13140]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li XB,Sun DZ,Dong JR,et al. Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy[J]. journal of applied physics,1998,83(12):7900-7902. |
| APA | Li XB,Sun DZ,Dong JR,Li JP,Kong MY,&Yoon SF.(1998).Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy.journal of applied physics,83(12),7900-7902. |
| MLA | Li XB,et al."Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy".journal of applied physics 83.12(1998):7900-7902. |
入库方式： OAI收割
来源：半导体研究所
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