Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques
文献类型：期刊论文
| 作者 | Lu LW ; Wang J ; Wang Y ; Ge WK ; Yang GW ; Wang ZG |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1998 |
| 卷号 | 83期号:4页码:2093-2097 |
| ISSN号 | 0021-8979 |
| 关键词 | DISCONTINUITIES HETEROJUNCTION |
| 通讯作者 | ge wk,hong kong univ sci & technol,dept phys,kowloon,hong kong. |
| 中文摘要 | the conduction-band offset delta e-c has been determined for a molecular beam epitaxy grown gaas/in0.2ga0.8as single quantum-well structure, by measuring the capacitance-voltage (c - v) profiling, taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carriers from the quantum well, respectively. we found that delta e-c = 0.227 ev, corresponding to about 89% delta e-g, from the c - v profiling; and delta e-c = 0.229ev, corresponding to about 89.9% delta e-g, from the deep-level transient spectroscopy (dlts) technique. the results suggest that the conduction-band discontinuity delta e-c obtained from the c-v profiling is in good agreement with that obtained from the dlts technique. (c) 1998 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13144]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu LW,Wang J,Wang Y,et al. Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques[J]. journal of applied physics,1998,83(4):2093-2097. |
| APA | Lu LW,Wang J,Wang Y,Ge WK,Yang GW,&Wang ZG.(1998).Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques.journal of applied physics,83(4),2093-2097. |
| MLA | Lu LW,et al."Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques".journal of applied physics 83.4(1998):2093-2097. |
入库方式： OAI收割
来源：半导体研究所
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