Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure
文献类型：期刊论文
| 作者 | Ji Y ; Chen YZ ; Luo KJ ; Zheng HZ ; Li YX ; Li CF ; Cheng WC ; Yang FH |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 72期号:25页码:3309-3311 |
| 关键词 | QUANTUM-WELL SCATTERING ELECTRONS ESCAPE |
| ISSN号 | 0003-6951 |
| 通讯作者 | ji y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | when an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband lo or la phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the coulomb correlation effect. the slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (qws) in a three-barrier, two-well heterostructure. the influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident qw. (c) 1998 american institute of physics. [s0003-6951(98)00925-5]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13148]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ji Y,Chen YZ,Luo KJ,et al. Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure[J]. applied physics letters,1998,72(25):3309-3311. |
| APA | Ji Y.,Chen YZ.,Luo KJ.,Zheng HZ.,Li YX.,...&Yang FH.(1998).Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure.applied physics letters,72(25),3309-3311. |
| MLA | Ji Y,et al."Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure".applied physics letters 72.25(1998):3309-3311. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。