Modification of InAs quantum dot structure by the growth of the capping layer
文献类型：期刊论文
| 作者 | Lian GD ; Yuan J ; Brown LM ; Kim GH ; Ritchie DA |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:1页码:49-51 |
| 关键词 | SEMICONDUCTOR |
| ISSN号 | 0003-6951 |
| 通讯作者 | lian gd,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | inas quantum dots inserted at the middle of a gaas quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. we find that the growth condition of the overlayer on the inas dots can lead to drastic changes in the structure of the dots. we attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the inas dots at elevated temperature. the result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. (c) 1998 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13150]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lian GD,Yuan J,Brown LM,et al. Modification of InAs quantum dot structure by the growth of the capping layer[J]. applied physics letters,1998,73(1):49-51. |
| APA | Lian GD,Yuan J,Brown LM,Kim GH,&Ritchie DA.(1998).Modification of InAs quantum dot structure by the growth of the capping layer.applied physics letters,73(1),49-51. |
| MLA | Lian GD,et al."Modification of InAs quantum dot structure by the growth of the capping layer".applied physics letters 73.1(1998):49-51. |
入库方式： OAI收割
来源：半导体研究所
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