Growth and transport properties of InAs thin films on GaAs
文献类型：期刊论文
| 作者 | Zhou HW ; Zeng YP ; Wang HM ; Dong JR ; Zhu ZP ; Pan L ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 191期号:3页码:361-364 |
| ISSN号 | 0022-0248 |
| 关键词 | MOLECULAR-BEAM EPITAXY EPILAYERS MBE |
| 通讯作者 | zhou hw,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | high-quality inas epitaxial layers have been grown on (1 0 0) oriented semi-insulating gaas substrates by mbe. the transport properties of largely lattice mismatched inas/gaas heterojunctions have been investigated by hall effect measurements down to 10 k. in spite of a high dislocation density at the heterointerface, very high electron mobilities are obtained in the inas thin films. by doping si into the layer far from the inas/gaas interface, we found that the doped samples have higher electron mobility than that of the undoped samples with the same thickness. the mobility demonstrates a pronounced minimum around 300 k for the undoped sample. but for si-doped samples, no pronounced minimum has been found. such abnormal behaviours are explained by the parallel conduction from the quasi-bulk carriers and interface carriers. these high-mobility inas thin films are found to be suitable materials for making hall elements. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13154]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou HW,Zeng YP,Wang HM,et al. Growth and transport properties of InAs thin films on GaAs[J]. journal of crystal growth,1998,191(3):361-364. |
| APA | Zhou HW.,Zeng YP.,Wang HM.,Dong JR.,Zhu ZP.,...&Kong MY.(1998).Growth and transport properties of InAs thin films on GaAs.journal of crystal growth,191(3),361-364. |
| MLA | Zhou HW,et al."Growth and transport properties of InAs thin films on GaAs".journal of crystal growth 191.3(1998):361-364. |
入库方式： OAI收割
来源：半导体研究所
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