Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires
文献类型:期刊论文
作者 | Chang K ; Xia JB |
刊名 | physical review b
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出版日期 | 1998 |
卷号 | 58期号:4页码:2031-2037 |
关键词 | WELL WIRES DIMENSIONAL EXCITONS OPTICAL-PROPERTIES THRESHOLD CURRENT ELECTRIC-FIELD BINDING-ENERGY DEPENDENCE ABSORPTION SPECTRA |
ISSN号 | 0163-1829 |
通讯作者 | chang k,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
中文摘要 | quantum-confined stark effects are investigated theoretically in gaas/alxga1-xas quantum wires formed in v-grooved structures. the electronic structures of the v-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. the binding energies of excitons are also studied by two-dimensional fourier transformation and variational method. the blue stark shifts are found when the electric field is applied in the growth direction. a possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the coulomb interaction. the numerical results are compared with the recent experiment measurement. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/13158] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chang K,Xia JB. Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires[J]. physical review b,1998,58(4):2031-2037. |
APA | Chang K,&Xia JB.(1998).Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires.physical review b,58(4),2031-2037. |
MLA | Chang K,et al."Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires".physical review b 58.4(1998):2031-2037. |
入库方式: OAI收割
来源:半导体研究所
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