Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser
文献类型：期刊论文
| 作者 | Pan Z ; Zhang Y ; Du Y ; Wu RH |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 1998 |
| 卷号 | 37期号:6b页码:3673-3675 |
| ISSN号 | 0021-4922 |
| 关键词 | VCSEL selective oxidation stability MICROSTRUCTURE WET OXIDATION |
| 通讯作者 | pan z,tokyo inst technol,precis & intelligence lab,midori ku,4259 nagatsuta,yokohama,kanagawa 2268503,japan. |
| 中文摘要 | the effects of the carrier gas flow and water temperature on the oxidation rate for different reaction temperatures were investigated. the optimum conditions for stable oxidation were obtained. two mechanisms of the oxidation process are revealed. one is the flow-controlling process, which is unstable. the other is the temperature-controlling process, which is stable. the stable region decreases for higher reaction temperatures. the simulation results for the stable oxidation region are also given. with optimum oxidation conditions, the stability and precision of the oxidation can be dramatically improved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13162]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Zhang Y,Du Y,et al. Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1998,37(6b):3673-3675. |
| APA | Pan Z,Zhang Y,Du Y,&Wu RH.(1998).Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser.japanese journal of applied physics part 1-regular papers short notes & review papers,37(6b),3673-3675. |
| MLA | Pan Z,et al."Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser".japanese journal of applied physics part 1-regular papers short notes & review papers 37.6b(1998):3673-3675. |
入库方式： OAI收割
来源：半导体研究所
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