High-concentration hydrogen in unintentionally doped GaN
文献类型：期刊论文
| 作者 | Zhang JP ; Wang XL ; Sun DZ ; Li XB ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 189期号:0页码:566-569 |
| 关键词 | gallium nitride gas source molecular beam epitaxy hydrogen autodoping FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang jp,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. 电子邮箱地址: zhangjp@red.semi.ac.cn |
| 中文摘要 | we use nuclear reaction analysis to study hydrogen in unintentionally doped gan, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of nh: ga complex. the complex is assumed to be one candidate answering for background electrons in unintentionally doped gan. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13172]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JP,Wang XL,Sun DZ,et al. High-concentration hydrogen in unintentionally doped GaN[J]. journal of crystal growth,1998,189(0):566-569. |
| APA | Zhang JP,Wang XL,Sun DZ,Li XB,&Kong MY.(1998).High-concentration hydrogen in unintentionally doped GaN.journal of crystal growth,189(0),566-569. |
| MLA | Zhang JP,et al."High-concentration hydrogen in unintentionally doped GaN".journal of crystal growth 189.0(1998):566-569. |
入库方式： OAI收割
来源：半导体研究所
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