中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

文献类型:期刊论文

作者Jiang DS
刊名compound semiconductors 1997
出版日期1998
卷号156期号:0页码:211-214
关键词SHALLOW DONORS
ISSN号0951-3248
通讯作者jiang ds,paul drude inst solid state elect,d-10117 berlin,germany.
中文摘要we analyze low-temperature raman and photoluminescence spectra of mbe-grown gan layers on sapphire. strong and sharp raman peaks are observed in the low frequency region. these peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal gan. it is proposed that a low frequency raman peak at 11.7 mev is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. the dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these gan layers.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/13178]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Jiang DS. Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate[J]. compound semiconductors 1997,1998,156(0):211-214.
APA Jiang DS.(1998).Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate.compound semiconductors 1997,156(0),211-214.
MLA Jiang DS."Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate".compound semiconductors 1997 156.0(1998):211-214.

入库方式: OAI收割

来源:半导体研究所

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