Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | compound semiconductors 1997
 |
| 出版日期 | 1998 |
| 卷号 | 156期号:0页码:211-214 |
| 关键词 | SHALLOW DONORS |
| ISSN号 | 0951-3248 |
| 通讯作者 | jiang ds,paul drude inst solid state elect,d-10117 berlin,germany. |
| 中文摘要 | we analyze low-temperature raman and photoluminescence spectra of mbe-grown gan layers on sapphire. strong and sharp raman peaks are observed in the low frequency region. these peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal gan. it is proposed that a low frequency raman peak at 11.7 mev is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. the dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these gan layers. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13178]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate[J]. compound semiconductors 1997,1998,156(0):211-214. |
| APA | Jiang DS.(1998).Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate.compound semiconductors 1997,156(0),211-214. |
| MLA | Jiang DS."Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate".compound semiconductors 1997 156.0(1998):211-214. |
入库方式： OAI收割
来源：半导体研究所
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