Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | solid state communications
 |
| 出版日期 | 1998 |
| 卷号 | 106期号:12页码:811-814 |
| 关键词 | quantum wells semiconductors electronic band structure luminescence TRANSISTOR STRUCTURES OPTICAL-TRANSITIONS MASS RENORMALIZATION HETEROJUNCTIONS LUMINESCENCE DENSITY FERMI-EDGE SINGULARITY |
| ISSN号 | 0038-1098 |
| 通讯作者 | li hx,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | fourier transform photoluminescence measurements were carried out to investigate the optical transitions in inxga1-xas/inyal1-yas one-side-modulation-doped asymmetric step quantum wells. samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. fermi edge singularity (fes) clearly can be observed for some samples. the electron subband energies in the ingaas/inalas step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. our results can help improve understanding for the application of ingaas/inalas step quantum wells in microelectronic and optoelectronic devices. (c) 1998 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13188]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells[J]. solid state communications,1998,106(12):811-814. |
| APA | Xu B.(1998).Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells.solid state communications,106(12),811-814. |
| MLA | Xu B."Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells".solid state communications 106.12(1998):811-814. |
入库方式： OAI收割
来源：半导体研究所
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