Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals
文献类型：期刊论文
| 作者 | Liu NZ ; Li GH ; Zhu ZM ; Han HX ; Wang ZP ; Ge WK ; Sou IK |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 1998 |
| 卷号 | 10期号:18页码:4119-4129 |
| 关键词 | VAPOR-PHASE EPITAXY ZNS-TE ALLOYS LUMINESCENCE EXCITONS SPECTRA FILMS GAAS |
| ISSN号 | 0953-8984 |
| 通讯作者 | liu nz,acad sinica,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the raman scattering and the photoluminescence (pl) of znsxte1-x mixed crystals grown by mbe, covering the entire composition range (0 less than or equal to x < 1). the results of raman studies show that the znsxte1-x mixed crystals display two-mode behaviour. in addition, photoluminescence spectra obtained in backscattering and edge-emission geometries, reflectivity spectra and the: temperature dependence of the photoluminescence of znsxte1-x have been employed to find out the origin of pl emissions in znsxte1-x with different x values. the results indicate that emission bands, for the samples with small x values, can be related to the band gap transitions or a shallow-level emission centre, while as x approaches 1, they are designated to strong radiative recombination of te isoelectronic centres (iecs). |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13192]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu NZ,Li GH,Zhu ZM,et al. Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals[J]. journal of physics-condensed matter,1998,10(18):4119-4129. |
| APA | Liu NZ.,Li GH.,Zhu ZM.,Han HX.,Wang ZP.,...&Sou IK.(1998).Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals.journal of physics-condensed matter,10(18),4119-4129. |
| MLA | Liu NZ,et al."Raman scattering and photoluminescence of ZnSxTe1-x mixed crystals".journal of physics-condensed matter 10.18(1998):4119-4129. |
入库方式： OAI收割
来源：半导体研究所
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