A study of strong photoluminescence of SiOx : H films
文献类型：期刊论文
| 作者 | Ma ZX ; Liao XB ; Cheng WC ; He J ; Yue GZ ; Wang YQ ; Diao HW ; Kong GL |
| 刊名 | physica status solidi b-basic research
 |
| 出版日期 | 1998 |
| 卷号 | 206期号:2页码:851-858 |
| 关键词 | VISIBLE-LIGHT EMISSION POROUS SILICON OPTICAL-PROPERTIES NANOCRYSTALS |
| ISSN号 | 0370-1972 |
| 通讯作者 | ma zx,chinese acad sci,ctr condensed matter phys,inst semicond,state lab surface phys,pob 912,beijing 100083,peoples r china. 电子邮箱地址: ams@mimi.cnc.ac.cn |
| 中文摘要 | we have examined photoluminescence (pl), ir absorption and raman spectra of a series of hydrogenated amorphous silicon oxide (a-siox:h, (0 < x < 2)) films fabricated by plasma enhanced chemical vapor deposition (pecvd). two strong luminescence bands were observed at room temperature, one is a broad envelope comprising a main peak around 670 nm and a shoulder at 835 nm, and the other, peaked around 850 nm; is found only after being annealed up to 1170 degrees c in n-2 environment. in conjunction with ir and raman spectra, the origins of the two luminescent bands and their annealing behaviors are discussed on the basis of quantum confinement effects. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13204]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma ZX,Liao XB,Cheng WC,et al. A study of strong photoluminescence of SiOx : H films[J]. physica status solidi b-basic research,1998,206(2):851-858. |
| APA | Ma ZX.,Liao XB.,Cheng WC.,He J.,Yue GZ.,...&Kong GL.(1998).A study of strong photoluminescence of SiOx : H films.physica status solidi b-basic research,206(2),851-858. |
| MLA | Ma ZX,et al."A study of strong photoluminescence of SiOx : H films".physica status solidi b-basic research 206.2(1998):851-858. |
入库方式： OAI收割
来源：半导体研究所
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