Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
文献类型：期刊论文
| 作者 | Wang LS ; Liu XG ; Zan YD ; Wang D ; Wang J ; Lu DC ; Wang ZG |
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 1998 |
| 卷号 | 41期号:2页码:203-207 |
| 关键词 | fabrication of GaN epitaxial films Al2O3/Si(001) substrate metalorganic chemical deposition crystal structure and surface morphology photoluminescence spectrum GROWTH DIODES BUFFER LAYER |
| ISSN号 | 1006-9321 |
| 通讯作者 | wang ls,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | single crystal gan films of hexagonal modification have been fabricated on al2o3/si (001) substrates via a low pressure metalorganic chemical deposition (lp-mocvd) method. the full width at half-maximum of (0002) x-ray diffraction peak for the gan film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the x-ray diffraction peak. al room temperature, the photoluminescence (pl) spectrum of gan exhibited near band edge emission peaking at 365 nm. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13226]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang LS,Liu XG,Zan YD,et al. Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates[J]. science in china series e-technological sciences,1998,41(2):203-207. |
| APA | Wang LS.,Liu XG.,Zan YD.,Wang D.,Wang J.,...&Wang ZG.(1998).Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates.science in china series e-technological sciences,41(2),203-207. |
| MLA | Wang LS,et al."Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates".science in china series e-technological sciences 41.2(1998):203-207. |
入库方式： OAI收割
来源：半导体研究所
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