Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 15期号:1页码:57-59 |
| 关键词 | MULTIPLE-QUANTUM WELLS PHOTOLUMINESCENCE SPECTROSCOPY TRANSISTOR STRUCTURES ELECTRON TEMPERATURE DENSITY |
| ISSN号 | 0256-307x |
| 通讯作者 | li hx,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | the population of the third (n = 3) two-dimensional electron subband of ingaas/inalas modulation-doped structures has been observed by means of fourier transform photoluminescence (pl). three well resolved pl peaks centred at 0.737, 0.908, and 0.980ev are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. the subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. thanks to the presence of fermi cutoff, the population ratio of these three subbands can be estimated. temperature- and excitation-dependent luminescences are also analyzed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13234]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure[J]. chinese physics letters,1998,15(1):57-59. |
| APA | Xu B.(1998).Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure.chinese physics letters,15(1),57-59. |
| MLA | Xu B."Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure".chinese physics letters 15.1(1998):57-59. |
入库方式： OAI收割
来源：半导体研究所
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