Temperature dependence of the Fermi level in low-temperature-grown GaAs
文献类型：期刊论文
| 作者 | Chen YH ; Yang Z ; Wang ZG ; Li RG |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 72期号:15页码:1866-1868 |
| 关键词 | BEAM-EPITAXIAL GAAS HOPPING CONDUCTION 200-DEGREES-C SPECTROSCOPY DEFECTS |
| ISSN号 | 0003-6951 |
| 通讯作者 | chen yh,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong. |
| 中文摘要 | a variable-temperature reflectance difference spectroscopy study of gaas grown by molecular beam epitaxy at low-temperature gaas (lt-gaas) shows that the fermi level is mostly determined by the point defects in samples annealed at below 600 degrees c and can be shifted by photoquenching the defects. the fermi level is otherwise almost temperature independent, leading to an estimated width of the defect band of 150 mev in the as-grown sample, for lt-gaas annealed at 850 degrees c, the fermi level is firmly pinned, most likely by the as precipitates. (c) 1998 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13238]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen YH,Yang Z,Wang ZG,et al. Temperature dependence of the Fermi level in low-temperature-grown GaAs[J]. applied physics letters,1998,72(15):1866-1868. |
| APA | Chen YH,Yang Z,Wang ZG,&Li RG.(1998).Temperature dependence of the Fermi level in low-temperature-grown GaAs.applied physics letters,72(15),1866-1868. |
| MLA | Chen YH,et al."Temperature dependence of the Fermi level in low-temperature-grown GaAs".applied physics letters 72.15(1998):1866-1868. |
入库方式： OAI收割
来源：半导体研究所
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