Hydrogen-decorated lattice defects in proton implanted GaN
文献类型：期刊论文
| 作者 | Weinstein MG ; Song CY ; Stavola M ; Pearton SJ ; Wilson RG ; Shul RJ ; Killeen KP ; Ludowise MJ |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 72期号:14页码:1703-1705 |
| 关键词 | AS-H BONDS COMPLEXES INP GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | stavola m,lehigh univ,dept phys,bldg 16,bethlehem,pa 18015 usa. |
| 中文摘要 | several vibrational bands were observed near 3100 cm(-1) in gan that had been implanted with hydrogen at room temperature and subsequently annealed, our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that an decorated by hydrogen, the frequencies are close to those predicted recently for v-ga-h-n complexes, leading us to tentatively assign the new lines to v-ga defects decorated with different numbers of h atoms. (c) 1998 american institute of physics. [s0003-6951(98)03614-6]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13242]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Weinstein MG,Song CY,Stavola M,et al. Hydrogen-decorated lattice defects in proton implanted GaN[J]. applied physics letters,1998,72(14):1703-1705. |
| APA | Weinstein MG.,Song CY.,Stavola M.,Pearton SJ.,Wilson RG.,...&Ludowise MJ.(1998).Hydrogen-decorated lattice defects in proton implanted GaN.applied physics letters,72(14),1703-1705. |
| MLA | Weinstein MG,et al."Hydrogen-decorated lattice defects in proton implanted GaN".applied physics letters 72.14(1998):1703-1705. |
入库方式： OAI收割
来源：半导体研究所
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