Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
文献类型：期刊论文
| 作者 | Wang HM ; Fan TW ; Wu J ; Zeng YP ; Dong JR ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 186期号:1-2页码:38-42 |
| 关键词 | MOLECULAR-BEAM EPITAXY CRITICAL LAYER THICKNESS THREADING DISLOCATIONS OVAL DEFECTS HETEROSTRUCTURES INXGA1-XAS ENERGY SI |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang hm,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | inas layers were grown on gaas by molecular beam epitaxy (mbe) at substrate temperature 450 and 480 degrees c, and the surface morphology was studied with scanning electron microscopy (sem). we have observed a high density of hexagonal deep pits for samples grown at 450 degrees c, however, the samples grown at 480 degrees c have smooth surface. the difference of morphology can be explained by different migration of cations which is temperature dependent. cross-sectional transmission electron microscopy (xtem) studies showed that the growth temperature also affect the distributions of threading dislocations in inas layers because the motion of dislocations is kinetically limited at lower temperature. (c) 1998 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13244]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HM,Fan TW,Wu J,et al. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE[J]. journal of crystal growth,1998,186(1-2):38-42. |
| APA | Wang HM,Fan TW,Wu J,Zeng YP,Dong JR,&Kong MY.(1998).Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE.journal of crystal growth,186(1-2),38-42. |
| MLA | Wang HM,et al."Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE".journal of crystal growth 186.1-2(1998):38-42. |
入库方式： OAI收割
来源：半导体研究所
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