Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | physics of low-dimensional structures
 |
| 出版日期 | 1997 |
| 卷号 | 12期号:0页码:213-218 |
| 关键词 | GAAS GROWTH |
| ISSN号 | 0204-3467 |
| 通讯作者 | wang zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the influence of interdot electronic coupling on photoluminescence (pl) spectra of self-assembled inas/gaas quantum dots (qds) has been systematically investigated combining with the measurement of transmission electron microscopy. the experimentally observed fast red-shift of pl energy and an anomalous reduction of the linewidth with increasing temperature indicate that the qd ensemble can be regarded as a coupled system. the study of multilayer vertically coupled qd structures shows that a red-shift of pl peak energy and a reduction of pl linewidth are expected as the number of qd layers is increased. on the other hand, two layer qds with different sizes have been grown according to the mechanism of a vertically correlated arrangement. however, only one pl peak related to the large qd ensemble has been observed due to the strong coupling in inas pairs. a new possible mechanism to reduce the pl linewidth of qd ensemble is also discussed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13266]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots[J]. physics of low-dimensional structures,1997,12(0):213-218. |
| APA | Han PD.(1997).Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots.physics of low-dimensional structures,12(0),213-218. |
| MLA | Han PD."Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots".physics of low-dimensional structures 12.0(1997):213-218. |
入库方式： OAI收割
来源：半导体研究所
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