Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | applied surface science
 |
| 出版日期 | 1998 |
| 卷号 | 123期号:0页码:343-346 |
| 关键词 | ZNSE/GAAS INTERFACE STATES |
| ISSN号 | 0169-4332 |
| 通讯作者 | chen yh,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong. |
| 中文摘要 | the steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin inas layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer inas in (311)-oriented gaas. the degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the inas islands. (c) 1998 elsevier science b.v. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13274]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix[J]. applied surface science,1998,123(0):343-346. |
| APA | Xu B.(1998).Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix.applied surface science,123(0),343-346. |
| MLA | Xu B."Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix".applied surface science 123.0(1998):343-346. |
入库方式： OAI收割
来源：半导体研究所
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