Heteroepitaxy of cubic GaN: influence of interface structure
文献类型：期刊论文
| 作者 | Trampert A ; Brandt O ; Yang H ; Yang B ; Ploog KH |
| 刊名 | microscopy of semiconducting materials 1997
 |
| 出版日期 | 1997 |
| 卷号 | 157期号:0页码:205-208 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAN/GAAS(001) GROWTH |
| ISSN号 | 0951-3248 |
| 通讯作者 | trampert a,paul drude inst festkorperelekt,hausvogteipl 5-7,d-10117 berlin,germany. |
| 中文摘要 | we report on the epitaxial growth and the microstructure of cubic gan. the layers are deposited by plasma-assisted molecular beam epitaxy on gaas and si substrates. despite the extreme lattice mismatch between these materials, gan grows in the metastable cubic phase with a well-defined orientation-relationship to the gaas substrate including a sharp heteroboundary. the preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13276]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Trampert A,Brandt O,Yang H,et al. Heteroepitaxy of cubic GaN: influence of interface structure[J]. microscopy of semiconducting materials 1997,1997,157(0):205-208. |
| APA | Trampert A,Brandt O,Yang H,Yang B,&Ploog KH.(1997).Heteroepitaxy of cubic GaN: influence of interface structure.microscopy of semiconducting materials 1997,157(0),205-208. |
| MLA | Trampert A,et al."Heteroepitaxy of cubic GaN: influence of interface structure".microscopy of semiconducting materials 1997 157.0(1997):205-208. |
入库方式： OAI收割
来源：半导体研究所
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