Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure
文献类型：期刊论文
| 作者 | Wu J ; Li HX ; Fan TW ; Wang ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 72期号:3页码:311-313 |
| ISSN号 | 0003-6951 |
| 通讯作者 | wu j,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | it was observed with transmission electron microscopy in the in0.52al0.48as/inxga1-xas/in0.52al0.48as system grown on the (001) inp substrate that misfit dislocation lines deviate [110] directions at an angle with its value depending on the gallium content. such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the iii-v ternary compounds. (c) 1998 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13290]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu J,Li HX,Fan TW,et al. Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure[J]. applied physics letters,1998,72(3):311-313. |
| APA | Wu J,Li HX,Fan TW,&Wang ZG.(1998).Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure.applied physics letters,72(3),311-313. |
| MLA | Wu J,et al."Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure".applied physics letters 72.3(1998):311-313. |
入库方式： OAI收割
来源：半导体研究所
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