Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li XB ; Sun DZ ; Kong MY ; Yoon SF |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1998 |
| 卷号 | 183期号:1-2页码:31-37 |
| 关键词 | SPATIALLY-RESOLVED CATHODOLUMINESCENCE TEMPERATURE |
| ISSN号 | 0022-0248 |
| 通讯作者 | li xb,chinese acad sci,inst semicond,912 beijing,beijing 100083,peoples r china. |
| 中文摘要 | the structural characteristics of gallium nitride (gan) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (gsmbe) have been investigated using high-resolution synchrotron irradiation x-ray diffraction and cathodoluminescence with a variable energy electron beam. besides the well-known gan hexagonal structure, a small portion of cubic phase gan was observed. the x-ray measurements provide an essential means for the structural identification of the gan layers. arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the gan cubic-phase typically increased as the probing depth was increased. the results suggest that the gan cubic phase is mostly located near the interface between the substrate and gan layer due to the initial nucleation. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13294]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li XB,Sun DZ,Kong MY,et al. Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy[J]. journal of crystal growth,1998,183(1-2):31-37. |
| APA | Li XB,Sun DZ,Kong MY,&Yoon SF.(1998).Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy.journal of crystal growth,183(1-2),31-37. |
| MLA | Li XB,et al."Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy".journal of crystal growth 183.1-2(1998):31-37. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。