Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix
文献类型：期刊论文
| 作者 | Chen YH ; Yang Z ; Bo XU ; Wang ZG ; Liang JB |
| 刊名 | chinese physics letters
 |
| 出版日期 | 1997 |
| 卷号 | 14期号:12页码:932-935 |
| 关键词 | REFLECTANCE-DIFFERENCE SPECTROSCOPY QUANTUM-WELLS ZNSE/GAAS INTERFACE 001 GAAS SUBMONOLAYER SURFACES STATES |
| ISSN号 | 0256-307x |
| 通讯作者 | chen yh,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong. |
| 中文摘要 | in-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an inas monolayer inserted in (311)-oriented gaas matrix is observed by reflectance difference spectroscopy. the observed steplike density of states demonstrates that the inas layer behaves like a two-dimensional quantum well rather than isolated quantum dots. the magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the inas layer grown on (311)-oriented gaas surface. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13306]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen YH,Yang Z,Bo XU,et al. Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix[J]. chinese physics letters,1997,14(12):932-935. |
| APA | Chen YH,Yang Z,Bo XU,Wang ZG,&Liang JB.(1997).Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix.chinese physics letters,14(12),932-935. |
| MLA | Chen YH,et al."Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix".chinese physics letters 14.12(1997):932-935. |
入库方式： OAI收割
来源：半导体研究所
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